View V23990-P81-A20-PM_3828887.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

V23990-P81-A20-PM datasheet version 02/03 flow pim ? 1, 600v maximum ratings / h?chstzul?ssige werte paramete r condition symbol datasheet values unit max. input rectifier bridge gleichrichter repetitive peak reverse voltage v rrm 1600 v periodische rckw. spitzensperrspannung forward current per diode dc current t h =80c i fav 29 a dauergrenzstrom surge forward current t p =10ms t j =25c i fsm 200 a sto?strom grenzwert i 2 t-value t p =10ms t j =25c i 2 t 200 a 2 s grenzlastintegral power dissipation per diode t j =150c t h =80c p tot 35 w verlustleistung pro diode transistor inverter transistor wechselrichter collector-emitter break down voltage v ce 600 v kollektor-emitter-sperrspannung dc collector current t j =150c t h =80c i c 7,8 a kollektor-dauergleichstrom repetitive peak collector current t p =1ms t h =80c i cpuls 15,6 a periodischer kollektorspitzenstrom power dissipation per igbt t j =150c t h =80c p tot 26 w verlustleistung pro igbt gate-emitter peak voltage v ge 20 v gate-emitter-spitzenspannung sc withstand time tj 150c v ge =15v t sc 10 us kurzschlu?verhalten v ce =600/1200 v diode inverte r diode wechselrichter dc forward current t j =150c t h =80c i f 8a dauergleichstrom limited by bond wires repetitive peak forward current t p =1ms t h =80c i frm 24 a periodischer spitzenstrom power dissipation per diode t j =150c t h =80c p tot 21 w verlustleistung pro diode transistor brc transistor brc collector-emitter break down voltage v ce 600 v kollektor-emitter-sperrspannung dc collector current t j =150c t h =80c i c 7,8 a kollektor-dauergleichstrom repetitive peak collector current t p =1ms t h =80c i cpuls 15,6 a periodischer kollektorspitzenstrom power dissipation per igbt t j =150c t h =80c p tot 26 w verlustleistung pro igbt gate-emitter peak voltage v ge 20 v gate-emitter-spitzenspannung sc withstand time tj 150c vge=15v t sc 10 us kurzschlu?verhalten vce=600/1200 v copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P81-A20-PM datasheet version 02/03 flow pim ? 1, 600v maximum ratings / h?chstzul?ssige werte paramete r condition symbol datasheet values unit max. diode brc diode brc dc forward current t j =150c t h =80c i f 8a dauergleichstrom limited by bond wires repetitive peak forward current t p =1ms t h =80c i frm 24 a periodischer spitzenstrom power dissipation per diode t j =150c t h =80c p tot 21 w verlustleistung pro diode thermal properties thermische eigenschaften max. chip temperature t j max 150 c max. chiptemperatur storage temperature t st g -40?+125 c lagertemperatur operation temperature t o p -40?.+125 c betriebstemperatur insulation properties modulisolation insulation voltage t=1min v is 4000 vdc isolationsspannung creepage distance min 12,7 mm kriechstrecke clearance min 12,7 mm luftstrecke copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P81-A20-PM datasheet version 02/03 flow pim ? 1, 600v characteristic values description symbol conditions datasheet values unit t(c) other conditions v ge (v) v ce (v) i c (a) if(a) (rgon-rgoff) v gs (v) v ds (v) i d (a) min typ max input rectifier bridge gleichrichte r forward voltage v f tj=25c 30 0,8 1,24 1,4 v durchla?pannung threshold voltage (for power loss calc. only) v to tj=25c 30 0,92 v schleusenspannung slope resistance (for power loss calc. only) r t tj=25c 30 10 mohm ersatzwiderstand reverse current i r tj=25c 0,01 ma sperrstrom thermal resistance chip to heatsink per chip r thjh thermal grease thikness 50um k/w w?rmewiderstand chip-khlk?rper pro chip warmeleitpaste dicke 50um = 0,61 w/mk 2 transistor inverter, inductive load transistor wechselrichte r gate emitter threshold voltage v ge(th) tj=25c vce=vge 0,0002 3 4 5 v gate-schwellenspannung tj=125c collector-emitter saturation voltage v ce(sat) tj=25c 15 5 1,5 2,3 2,8 v kollektor-emitter s?ttigungsspannung tj=125c 2,6 collector-emitter cut-off incl.fred i ces tj=25c 0 600 0,06 ma kollektor-emitter reststrom inkl.fred tj=125c gate-emitter leakage current i ges tj=25c 25 0 120 na gate-emitter reststrom tj=150c turn-on delay time t d(on) tj=25c 15 300 5 ns einschaltverz?gerungszeit tj=125c rgon=64 ohm 11 rise time t r tj=25c 15 300 5 ns anstiegszeit tj=125c rgon=64 ohm 10 turn-off delay time t d(off) tj=25c 15 300 5 ns abschaltverz?gerungszeit tj=125c rgoff=32 ohm 135 fall time t f tj=25c 15 300 5 ns fallzeit tj=125c rgoff=32 ohm 40 turn-on energy loss per pulse e on tj=25c 15 300 5 mws einschaltverlustenergie pro puls tj=125c rgon=64 ohm 0,102 turn-off energy loss per pulse e off tj=25c 15 300 5 mws abschaltverlustenergie pro puls tj=125c rgoff=32ohm 0,102 input capacitance c ies tj=25c f=1mhz 0 25 0,264 nf eingangskapazit?t tj=125c output capacitance c oss tj=25c f=1mhz 0 25 0,029 nf ausgangskapazit?t tj=125c reverse transfer capacitance c rss tj=25c f=1mhz 0 25 0,017 nf rckwirkungskapazit?t tj=125c gate charge q gate tj=25c 15 480 4 24 nc gate ladung tj=125c thermal resistance chip to heatsink per chip r thjh thermal grease thikness 50um k/w w?rmewiderstand chip-khlk?rper pro chip warmeleitpaste dicke 50um = 0,61 w/mk 2,7 diode inverter diode wechselrichte r diode forward voltage v f tj=25c 5 1 1,54 2,2 v durchla?spannung tj=125c 1,17 peak reverse recovery current i rm tj=25c 15 300 5 rckstromspitze tj=125c rgon=64 ohm 10,6 reverse recovery time t rr tj=25c 15 300 5 ns sperreverz?gerungszeit tj=125c rgon=64 ohm 63 reverse recovered charge q rr tj=25c 15 300 5 uc sperrverz?gerungsladung tj=125c rgon=64 ohm 0,342 reverse recovered energy e rec tj=25c 15 300 5 mws sperrverz?gerungsenergie tj=125c rgon=64 ohm 0,053 thermal resistance chip to heatsink per chip r thjh thermal grease thikness 50um k/w w?rmewiderstand chip-khlk?rper pro chip warmeleitpaste dicke 50um = 0,61 w/mk 3,4 copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P81-A20-PM datasheet version 02/03 flow pim ? 1, 600v characteristic values description symbol conditions datasheet values unit t(c) other conditions v ge (v) v ce (v) i c (a) if(a) (rgon-rgoff) v gs (v) v ds (v) i d (a) min typ max transistor brc transistor brc gate emitter threshold voltage v ge(th) tj=25c vce=vge 0,0002 3 4 5 v gate-schwellenspannung tj=125c collector-emitter saturation voltage v ce(sat) tj=25c 15 5 1,5 2,3 2,8 v kollektor-emitter s?ttigungsspannung tj=125c 2,6 collector-emitter cut-off i ces tj=25c 0 600 0,02 ma kollektor-emitter reststrom tj=125c gate-emitter leakage current i ges tj=25c 25 0 100 na gate-emitter reststrom tj=150c turn-on delay time t d(on) tj=25c 15 300 5 ns einschaltverz?gerungszeit tj=125c rgon=64 ohm 11 rise time t r tj=25c 15 300 5 ns anstiegszeit tj=125c rgon=64 ohm 13 turn-off delay time t d(off) tj=25c 15 300 5 ns abschaltverz?gerungszeit tj=125c rgoff=32 ohm 132 fall time t f tj=25c 15 300 5 ns fallzeit tj=125c rgoff=32 ohm 38 turn-on energy loss per pulse e on tj=25c 15 300 5 uws einschaltverlustenergie pro puls tj=125c rgon=64 ohm 0,103 turn-off energy loss per pulse e of f tj=25c 15 300 5 uws abschaltverlustenergie pro puls tj=125c rgoff=32ohm 0,105 input capacitance c iss tj=25c f=1mhz 0 25 0,264 0,32 nf eingangskapazit?t tj=125c output capacitance c oss tj=25c f=1mhz 0 25 0,029 nf ausgangskapazit?t tj=125c reverse transfer capacitance c rss tj=25c f=1mhz 0 25 0,017 nf rckwirkungskapazit?t tj=125c gate charge q gate tj=25c 15 480 4 24 31 nc gate ladung tj=125c thermal resistance chip to heatsink per chip r thjh thermal grease thikness 50um k/w w?rmewiderstand chip-khlk?rper pro chip warmeleitpaste dicke 50um = 0,61 w/mk 2,7 diode brc diode brc diode forward voltage v f tj=25c 5 1 1,54 2,2 v durchla?spannung tj=125c 1,17 reverse current i r tj=25c 600 0,06 ua sperrstrom peak reverse recovery current irm tj=25c 15 300 5 50um k/w w?rmewiderstand chip-khlk?rper pro chip warmeleitpaste dicke 50um = 0,61 w/mk 3,4 ntc-thermistor ntc-widerstand rated resistance r 25 tc=25c tol. 5% 4,2 4,7 5,3 kohm nennwiderstand deviation of r100 d r/r tc=100c 2,56 %/k abweichung von r100 power dissipation given epcos-typ p tc=25c 210 mw verlustleistung epcos-typ angeben b-value b (25/100) tol. 3% 3530 k b-wert copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P81-A20-PM datasheet version 02/03 flow pim ? 1, 600v output inverter figure 1. typical output characteristics figure 2. typical output characteristics output inverter igbt output inverter igbt ic= f(vce) ic= f(vce) parameter: tp = 250 ms tj = 25 c parameter: tp = 250 ms tj = 125 c vge parameter: from: 5 v to 15 v vge parameter: from: 5 v to 15 v in 1 v steps in 1 v steps figure 3. typical transfer characteristics figure 4. typical diode forward current as output inverter igbt a function of forward voltage ic= f(vge) output inverter fred if=f(vf ) parameter: tp = 250 ms vce = 8 v parameter: tp = 250 ms 0 2 4 6 8 10 12 14 16 012345 v ce (v) ic (a) 0 1 2 3 4 5 6 7 8 9 10 024681012 v ge (v) i c (a) 125 oc 25 oc 0 1 2 3 4 5 6 7 8 9 10 0 0,5 1 1,5 2 2,5 v f (v) i f (a) 25 oc 125 oc , 0 2 4 6 8 10 12 14 16 012345 v ce (v) ic (a) copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P81-A20-PM datasheet version 02/03 flow pim ? 1, 600v output inverter figure 5. typical switching energy losses figure 6. typical switching energy losses as a function of collector current as a function of gate resistor output inverter igbt output inverter igbt e = f (ic) e = f (rg) inductive load, tj = 125 c inductive load, tj = 125 c vce = 300 v vce = 300 v vge= 15 v vge= 15 v rgon = 2*rgoff = 64 ? ic = 5a figure 7. typical switching times as a figure 8. typical switching times as a function of collector current function of gate resistor output inverter igbt output inverter igbt t = f (ic) t = f (rg) inductive load, tj = 125 c inductive load, tj = 125 c vce = 300 v vce = 300 v vge= 15 v vge= 15 v rgon = 2*rgoff = 64 ? ic = 5a t doff t f t don t r 0,001 0,01 0,1 1 0246810 ic (a) t ( s) e off e on erec 0 0,05 0,1 0,15 0,2 0,25 0246810 i c (a) e (mws) e off e on erec 0 0,05 0,1 0,15 0,2 0,25 0 50 100 150 200 250 300 r g ( ? ) e (mws) t doff t f t don t r 0,001 0,01 0,1 1 0 50 100 150 200 250 300 r g ( ? ) t ( s) copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P81-A20-PM datasheet version 02/03 flow pim ? 1, 600v output inverter figure 9. typical reverse recovery time as a figure 10. typical reverse recovery current as a function of igbt turn on gate resistor function of igbt turn on gate resistor output inverter fred diode output inverter fred diode trr = f (rgon) irrm = f (rgon) tj = 125 c tj = 125 c vr = 300 v vr = 300 v if= 5 a if= 5 a figure 11. typical reverse recovery charge as a figure 12. typical rate of fall of forward function of igbt turn on gate resistor and reverse recovery current as a output inverter fred diode function of igbt turn on gate resistor qrr = f (rgon) output inverter fred diode di0/dt,direc/dt= f (rgon) tj = 125 c tj = 125 c vr = 300 v vr = 300 v if= 5 a if= 5 a 0 0,02 0,04 0,06 0,08 0,1 0,12 0 50 100 150 200 250 300 r gon ( ? ) t rr ( s) 0 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 120 140 160 180 200 r gon ( ? ) irr m (a) 0 0,05 0,1 0,15 0,2 0,25 0,3 0,35 0,4 0 50 100 150 200 250 300 r gon ( ? ) q rr ( c) di0/dt direc/dt 0 100 200 300 400 500 600 700 800 900 1000 0 50 100 150 200 250 300 r gon ( ? ) di rec / dt (a/ s) copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P81-A20-PM datasheet version 02/03 flow pim ? 1, 600v output inverter figure 13. igbt transient thermal impedance figure 14. fred transient thermal impedance as a function of pulse width as a function of pulse width zthjh = f(tp) zthjh = f(tp) parameter: d = tp / t rthjh = 2,7 k/w parameter: d = tp / t rthjh = 3,4 k/w igbt thermal model values fred thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,05 5,3e+01 0,10 1,2e+02 0,19 1,3e+00 0,16 1,6e+00 0,80 1,7e-01 0,84 1,8e-01 0,61 3,9e-02 1,09 4,6e-02 0,55 7,2e-03 0,64 6,9e-03 0,26 1,1e-03 0,42 1,3e-03 0,25 2,2e-04 0,16 1,4e-04 t p (s) z thjh (k/w) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 t p (s) z thjh (k/w) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P81-A20-PM datasheet version 02/03 flow pim ? 1, 600v output inverter figure 15. power dissipation as a figure 16. collector current as a function of heatsink temperature function of heatsink temperature output inverter igbt output inverter igbt ptot = f (th) ic = f (th) p arameter: tj = 150c p arameter: tj = 150c vge= 15 v figure 17. power dissipation as a figure 18. forward current as a function of heatsink temperature function of heatsink temperature output inverter fred output inverter fred ptot = f (th) if = f (th) p arameter: tj = 150c p arameter: tj = 150c 0 10 20 30 40 50 60 0 50 100 150 200 th ( o c) p tot (w) 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 th ( o c) i c (a) 0 5 10 15 20 25 30 35 40 45 50 0 20 40 60 80 100 120 140 160 th ( o c) p tot (w) 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 th ( o c) i f (a) copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P81-A20-PM datasheet version 02/03 flow pim ? 1, 600v brake figure 19. typical output characteristics figure 20. typical output characteristics brake igbt brake igbt ic= f(vce) ic= f(vce) parameter: tp = 250 ms tj = 25 c parameter: tp = 250 ms tj = 125 c vge parameter: from: 5 v to 15 v vge parameter: from: 5 v to 15 v in 1 v steps in 1 v steps figure 21. typical transfer characteristics figure 22. typical diode forward current as brake igbt a function of forward voltage ic= f(vge) brake fred if=f(vf) parameter: tp = 250 ms vce = 10 v parameter: tp = 250 ms 0 2 4 6 8 10 12 14 16 012345 v ce (v) i c (a) 0 1 2 3 4 5 6 7 8 9 10 0246810 v ge (v) i c (a) 125 o c 25 0 2 4 6 8 10 12 14 16 18 20 0 0,5 1 1,5 2 2,5 v f (v) i f (a) 125 25 0 2 4 6 8 10 12 14 16 012345 v ce (v) i c (a) copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P81-A20-PM datasheet version 02/03 flow pim ? 1, 600v brake figure 23. typical switching energy losses figure 24. typical switching energy losses as a function of collector current as a function of gate resistor brake igbt brake igbt e = f (ic) e = f (rg) inductive load, tj = 125 c inductive load, tj = 125 c vce = 300 v vce = 300 v vge= 15 v vge= 15 v rgon = 2*rgoff = 64 ? ic = 5a figure 25. typical switching times as a figure 26. typical switching times as a function of collector current function of gate resistor brake igbt brake igbt t = f (ic) t = f (rg) inductive load, tj = 125 c inductive load, tj = 125 c vce = 300 v vce = 300 v vge= 15 v vge= 15 v rgon = 2*rgoff = 64 ? ic = 5a t doff t f t don t r 0,001 0,01 0,1 1 0246810 ic (a) t ( s) e off e on erec 0 0,02 0,04 0,06 0,08 0,1 0,12 0,14 0,16 0,18 0,2 0246810 i c (a) e (mws) e off e on erec 0 0,02 0,04 0,06 0,08 0,1 0,12 0,14 0,16 0,18 0,2 0 50 100 150 200 250 300 r g ( ? ) e (mws) t doff t f t don t r 0,001 0,01 0,1 1 0 50 100 150 200 250 300 r g ( ? ) t ( s) copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P81-A20-PM datasheet version 02/03 flow pim ? 1, 600v brake figure 27. igbt transient thermal impedance figure 28. fred transient thermal impedance as a function of pulse width as a function of pulse width zthjh = f(tp) zthjh = f(tp) parameter: d = tp / t rthjh = 2,7 k/w parameter: d = tp / t rthjh = 3,4 k/w figure 29. power dissipation as a figure 30. collector current as a function of heatsink temperature function of heatsink temperature brake igbt brake igbt ptot = f (th) ic = f (th) parameter: tj = 150c parameter: tj = 150c vge= 15 v t p (s) z thjh (k/w) d = 0,5 0,2 0,1 0,05 0,02 0,01 0 , 005 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 t p (s) z thjh (k/w) d = 0,5 0,2 0,1 0,05 0,02 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 140 160 th ( o c) p tot (w) 0 1 2 3 4 5 6 7 8 9 0 20 40 60 80 100 120 140 160 th ( o c) i c (a) copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P81-A20-PM datasheet version 02/03 flow pim ? 1, 600v brake figure 31. power dissipation as a figure 32. forward current as a function of heatsink temperature function of heatsink temperature brake fred brake fred ptot = f (th) if = f (th) parameter: tj = 150c parameter: tj = 150c 0 5 10 15 20 25 30 35 40 45 50 0 20 40 60 80 100 120 140 160 th ( o c) p tot (w) 0 1 2 3 4 5 6 7 8 9 0 20 40 60 80 100 120 140 160 th ( o c) i f (a) copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P81-A20-PM datasheet version 02/03 flow pim ? 1, 600v input rectifier bridge figure 33. typical diode forward current as figure 34. diode transient thermal impedance a function of forward voltage as a function of pulse width rectifier diode if=f(vf) zthjh = f(tp) parameter: tp = 250 ms parameter: d = tp / t rthjh = 2,0 k/w figure 35. power dissipation as a figure 36. forward current as a function of heatsink temperature function of heatsink temperature rectifier diode rectifier diode ptot = f (th) if = f (th) parameter: tj = 150c parameter: tj = 150c 0 5 10 15 20 25 30 35 40 0 0,5 1 1,5 2 v f (v) i f (a) 25c 125c t p (s) z thjc (k/w) d = 0,5 0,2 0,1 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 0 10 20 30 40 50 60 0 20 40 60 80 100 120 140 160 th ( o c) p tot (w) 0 5 10 15 20 25 30 35 40 45 50 0 20 40 60 80 100 120 140 160 th ( o c) i f (a) copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P81-A20-PM datasheet version 02/03 flow pim ? 1, 600v thermistor figure 37. typical ntc characteristic as afunction of temperature ntc rt / r25 = f (t) ntc-typical temperature characteristic 0 5 10 15 20 25 25 50 75 100 125 150 t (c) r t /r 25 copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P81-A20-PM datasheet version 02/03 flow pim ? 1, 600v output inverter application general conditions: 3 phase spwm, vgeon= 15 v vgeoff=0v rgon= 64 ohms rgoff = 32 ohms figure 1. typical avarage static loss figure 2. typical avarage static loss as a function of output current as a function of output current igbt ploss=f(iout) fred ploss=f(iout) conditions: tj=125c conditions: tj=125c modulation index * cosfi modulation index * cosfi parameter mi*cosfi from -1,00 to 1,00 parameter mi*cosfi from -1,00 to 1,00 in 0,20 steps in 0,20 steps figure 3. typical avarage switching loss figure 4. typical avarage switching loss as a function of output current as a function of output current igbt ploss=f(iout) fred ploss=f(iout) conditions: tj=125c conditions: tj=125c dc link= 320 v dc link= 320 v switching freq. fsw from 2 khz t o 16 khz switching freq. fsw from 2 khz t o 16 khz parameter in * 2 steps parameter in * 2 steps mi*cosfi=-1 mi*cosfi=1 0 2 4 6 8 10 12 012345678 iout (a) ploss (w) mi*cosfi=-1 mi*cosfi=1 0 1 2 3 4 5 6 012345678 iout (a) ploss (w) fsw=2khz fsw=16khz 0,0 0,5 1,0 1,5 2,0 2,5 3,0 012345678 iout (a) ploss (w) fsw=2khz fsw=16khz 0,0 0,1 0,2 0,3 0,4 0,5 0,6 012345678 iout (a) ploss (w) copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P81-A20-PM datasheet version 02/03 flow pim ? 1, 600v output inverter application general conditions: 3 phase spwm, vgeon= 15 v vgeoff=0v rgon= 64 ohms rgoff = 32 ohms figure 5. typical available 50hz output current figure 6. typical available 50hz output current as a function of mi*cosfi as a function of switching frequency phase iout=f(mi*cosfi) phase iout=f(fsw) conditions: tj=125c conditions: tj=125c dc link= 320 v dc link= 320 v fsw= 16 khz mi*cosfi= 0,8 heatsink temp. th from 60 c to 100 c heatsink temp. th from 60 c to 100 c parameter in 5 c steps parameter in 5 c steps figure 7. typical available 50hz output current figure 8. typical available 0hz output current as a function of mi*cosfi and fsw as a function of switching frequency phase iout=f(fsw,mi*cosfi) phase ioutpeak=f(fsw) conditions: tj=125c conditions: tj=125c dc link= 320 v dc link= 320 v th= 80 c heatsink temp. th from 60 c to 100 c parameter in 5 c steps th=60c th=100c 0 1 2 3 4 5 6 7 8 -1,0 -0,8 -0,6 -0,4 -0,2 0,0 0,2 0,4 0,6 0,8 1,0 mi*cosfi iout (a) th=60c th=100c 0 1 2 3 4 5 6 7 8 1 10 100 f sw (khz) iout (a) th=60c th=100c 0 1 2 3 4 5 6 7 8 1 10 100 f sw (khz) iout (apeak) 12481632 -1,00 -0,80 -0,60 -0,40 -0,20 0,00 0,20 0,40 0,60 0,80 1,00 iout (a) 6,5-7,501 mi*cosfi fsw (khz) copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P81-A20-PM datasheet version 02/03 flow pim ? 1, 600v output inverter application general conditions: 3 phase spwm, vgeon= 15 v vgeoff=0v rgon= 64 ohms rgoff = 32 ohms figure 9. typical available electric figure 10. typical efficiency peak output power as a as a function of output power t function of heatsink temperature inverter pout=f(th) inverter efficiency=f(pout) conditions: tj=125c conditions: tj=125c dc link= 320 v dc link= 320 v modulation index mi= 1 modulation index mi= 1 cosfi= 0,80 cosfi= 0,80 switching freq. fsw from 2 khz t o 16 khz switching freq. fsw from 2 khz t o 16 khz parameter in * 2 steps parameter in * 2 steps figure 11. typical available overload factor as a function of motor power and switching frequency inverter ppeak/pnom=f(pnom,fsw) conditions: tj=125c dc link= 320 v modulation index mi= 1 cosfi= 0,8 switching freq. fsw from 1 khz t o 16 khz parameter in * 2 steps heatsink temperature= 80 c motor efficiency= 0,85 2khz 16khz 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 60 65 70 75 80 85 90 95 100 th ( o c) pout (kw) 2khz 16khz 93,0 93,5 94,0 94,5 95,0 95,5 96,0 96,5 97,0 97,5 98,0 98,5 0,0 0,5 1,0 1,5 2,0 pout (kw) efficiency (%) switching frequency (khz ) 100 150 200 250 300 350 400 450 500 motor nominal power (hp/kw) overload (%) 1 396 264 198 132 0 0 0 2 396 264 198 132 0 0 0 4 396 264 198 132 0 0 0 8 396 264 198 132 0 0 0 16 396 264 198 132 0 0 0 0,50 / 0,37 0,75 / 0,55 1,00 / 0,74 1,50 / 1,10 2,00 / 1,47 3,00 / 2,21 5,00 / 3,68 copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com

▲Up To Search▲

Price & Availability of V23990-P81-A20-PM

	To Download V23990-P81-A20-PM Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .